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Resonance Raman scattering of Si local vibrational modes in GaAs

Resonante Ramanstreuung an lokalisierten Schwingungsmoden von Si in GaAs
: Maier, M.; Ramsteiner, M.; Ennen, H.; Wagner, J.


Physical Review. B 38 (1988), Nr.15, S.10669-10676 : Abb.,Tab.,Lit.
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
ISSN: 2469-9950
Fraunhofer IAF ()
GaAs; lokalisierter Schwingungsmode; resonante Ramanstreuung; Si-Dotierung

We have studied the resonance of Raman scattering by Si local vibrational modes (LVM's) in heavily doped GaAs prepared by ion implantation and rapid thermal annealing. For photon energies (1.9-2.7 eV) approaching the E1 energy gap, similar resonance behavior was found for scattering by the Si on As site (Si sub As) LVM and by the longitudinal-optical phonon. Compared with undoped GaAs, both resonances are reduced in peak height and are broadened. This can be understood on the basis of a lowering and broadening of the (E1,E1+Delta1) gap resonance due to residual implantation damage and due to the high dopant concentration. Scattering by the Si on Ga site (Si sub Ga) LVM, in contrast, shows no resonance enhancement for the above range of photon energies. However, excitation at 3.00 eV, which is almost in resonance with the E1 gap energy, also enhances scattering by the Si sub Ga LVM, indicating a rather narrow E1 gap resonance for that LVM. Taking advantage of that resonance we observe a lso Raman scattering by the Si sub Ga LVM in heavily doped GaAs layers grown by molecular-beam epitaxy down to a Si concentration of about 10 E18 cm-3. (IAF)