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Resonance fluorescence and polariton effects in GaAs thin layers

Resonanzfluoreszenz und Polarioneffekte in dünnen GaAs-Schichten
: Schneider, H.; Köhler, K.


Physical Review. B 52 (1995), Nr.20, S.R14364-R14367
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
Fraunhofer IAF ()
exciton polariton; Exziton-Polariton; resonance fluorescence; Resonanzfluoreszenz; time-resolved photoluminescence; zeitaufgelöste Photolumineszenz

We have analyzed the photoluminescence (PL) of thin bulklike GaAs layers under nearly resonant excitation by transform-limited picosecond laser pulses. The PL spectra show clear signatures of polarization effects. Simultaneous excitation of several modes gives rise to structures in the PL time dependence due to polarization interference. In the case of a single polarization mode, we have observed the resonant fluorescence and spectral migration effects, which can be explained in the framework of a forced-harmonic-oscillator model.