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Residual stress during local SIMOX process - Raman measurement and simulation

: Seidl, A.; Takai, M.; Sayama, H.; Haramura, K.; Ryssel, H.; Schork, R.; Kato, K.

Nuclear instruments and methods in physics research, Section A. Accelerators, spectrometers, detectors and associated equipment 80/81 (1993), S.842-845
ISSN: 0167-5087
ISSN: 0168-9002
Fraunhofer IIS B ( IISB) ()
ion implantation; oxygen; raman spectroscopy; silicon; stress; stress mechanism; stress simulation

Possible sources of mechanical stress arising during fabrication of local SOI structures were discussed.A finite element package was employed in order to obtain two-dimensional stress profiles.The simulated data were compared with Raman measurements.It was shown that at the same time a volume expansion of the buried oxide and a contraction of the SOI layer are present. Qualitative agreement between measurements and simulation results could be achieved.Further TEM studies are suggested to improve the accuracy of the model.