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Relaxation oscillations in single-frequency InAsSb narrow band-gap lasers

 

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Applied Physics Letters 72 (1998), Nr.26, S.3428-3430 : Ill., Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Englisch
Zeitschriftenaufsatz
Fraunhofer IFU; 2002 in Helmholtz-Gesellschaft integriert

Abstract
Relaxation oscillations have been investigated in A3 B5 narrow band-gap semiconductor lasers. Based on wideband intensity noise measurements, the relaxation oscillation frequency has been observed up to 2 GHz for a 2 mW cw single-frequency InAsSb laser at, a 3.4 1 mu m wavelength. Laser parameters that influence the bandwidth, including the photon lifetime tau p, the differential gain A and the spontaneous recombination lifetime tau s were calculated from experimental data obtained at 95 K. We found tau p in the range 0.7-1.9 ps, A was estimated to be (4.7 - 7.3) X 10 (exp -6) cm(-3)s(-1) and tau s = 2.5 - 6.9 ns. Relaxation oscillations occurred beyond the modulation bandwidth required for typical applications of antimonide lasers in spectroscopy.

: http://publica.fraunhofer.de/dokumente/PX-31670.html