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Reflection approach for the analytical description of light ion implantation into bilayer structures



Radiation effects and defects in solids 130/131 (1994), S.495-506
ISSN: 1042-0150
Fraunhofer IIS B ( IISB) ()
analytical description; implantation profile; ion implantation; ion reflection; Monte Carlo methods; multilayer model

It has been shown the incorporation of ion reflection phenomenon into a multilayer model enables much more accurate prediction of the implantated dopand distributions using analytical methods. The final profile in a bilayer structure has been described using the sum of two distribution: C sub1 (x) plus C sub2 (x), C sub1 (x) representing the concentration as it would be in a semiinfinitive mask material and C sub2 (x) describing the final locations of ions additionally reflected (backscattered) from the interface (Gaussian distribution). Adequate change of the profile shape in the mask has been accounted for. Similar treatment for heavier materials on light substrates seems possible, but would be restricted to cases with non-zero ion reflection coefficients for ion/mask combination.