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Redeposition in ion milling

 
: Müller, K.P.; Pelka, J.

Microelectronic engineering 6 (1987), S.1-11 : Abb.
ISSN: 0167-9317
Englisch
Zeitschriftenaufsatz
Fraunhofer ISIT ()
computer simulation; Computersimulation; ion beam etching; ion milling; Ionenstrahlätzung; process modeling; Prozeßsimulation; redeposition; Sputter; sputtering; trenching

Abstract
Redeposition is, beside trenching, the most important secondary effect in ion milling, which has a serious influence on the obtained profiles. An analytical model is developed on the basis of mass preservation: The complete mass, emerging from one milled target point, is redeposited on a screen. Considering a cos(4)-distribution of the sputtered particles, an equation for the thickness of the redeposited layer is given. These results are implemented in the computer simulation program COMPOSITE. A comparison between simulated and etched profiles shows a good agreement. (IMT)

: http://publica.fraunhofer.de/dokumente/PX-31428.html