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Raman spectroscopy of dopant impurities in homogeneously and planar -delta- doped III-V semiconductors.

Ramanspektroskopie von Dotieratomen in homogenen und planar -delta- dotierten III-V Halbleitern
: Wagner, J.


Materials Science Forum 65/66 (1990), S.1-10 : Abb.,Lit.
ISSN: 0255-5476
Fraunhofer IAF ()
doping; Dotierung; III-V Halbleiter; III-V semiconductors; local vibrational mode spectroscopy; raman spectroscopy; Ramanspektroskopie; Spektroskopie lokaler Schwingungsmoden

Raman scattering by local vibrational modes (LVM) is dicussed as a quantitative diagnostic tool to study the incorporation of dopants into GaAs and related materials, such as AlxGa1-xAs, InAs, and InSb. With this technique LVM of Si, Be, and C have been observed so far. Attention has to be paid to the appropriate choice of incident photon energies in the Raman experiment to take advantage of a resonant enhancement of the LVM scattering cross section for energies matching the E1 band gap of the host material. A sufficiently high sensitivity has been achieved to study isolated planar (delta-)doped layers in GaAs.