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Raman spectroscopy for impurity characterization in III-V semiconductors.

Raman-Spektroskopie zur Charakterisierung von Störstellen in III-V Halbleitern
: Wagner, J.


Applied surface science 50 (1991), S.79-86 : Abb.,Lit.
ISSN: 0169-4332
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductors; impurity; raman scattering; Ramanstreuung; Störstelle

Raman spectroscopy is discussed as a tool for the quantitative assessment of impurities and defects in III-V semiconductors. After a brief discussion of the effect of defects on Raman scattering by intrinsic phonon modes emphasis is laid on the characteriazation of individual impurities either via scattering by impurity-induced local vibrational modes or via scattering by internal electronic excitations.