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Raman spectroscopic assessment of carbon-hydrogen pairs in carbon-doped GaAs layers.

Ramanspektroskopische Untersuchung von Kohlenstoff-Wasserstoff-Paaren in Kohlenstoff dotierten GaAs-Schichten
: Bachem, K.H.; Ashwin, M.; Newman, R.C.; Woodhouse, K.; Nicklin, R.; Bradley, R.R.; Lauterbach, T.; Maier, M.; Wagner, J.


Applied Physics Letters 60 (1992), Nr.20, S.2546-2548 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
carbon doping; carbon hydrogen pair; GaAs; Kohlenstoff-Wasserstoff-Paar; Kohlenstoffdotierung; local vibrational mode spectroscopy; Spektroskopie lokaler Schwingungsmoden

Raman scattering by local vibrational modes of carbon-hydrogen pairs is reported for heavily carbon-doped epitaxial GaAs layers. Scattering by the longitudinal carbon mode of these pairs at 452 cmhighminus1 shows a strong resonant enhancement for incident photon energies approaching the Esub1 band- gap energy of GaAs (approximately equal to 3 eV). A possible mechanism for this resonance behavior is discussed in terms of the displacement of the carbon atom from its normal arsenic lattice site accompanied by a lengthening and weakening of the carbon-gallium bonds when carbon-hydrogen pairs form. The present findings demonstrate that resonant Raman scattering is an attractive tool for the detection of carbon-hydrogen pair formation in thin carbon-doped epitaxial GaAs layers grown from source materials containing hydrogen. The detection limit is estimated to be in the low 10high18 cmhighminus3 range.