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Radiation sensitivity of light emitting diodes (LED), laser diodes (LD) and photodiodes (PD)

: Lischka, H.; Henschel, H.; Lennartz, W.; Schmidt, H.U.

Volltext urn:nbn:de:0011-px-307356 (350 KByte PDF)
MD5 Fingerprint: 9a71f99c9b51f72ca0d613223107629c
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Erstellt am: 17.9.2011

Institute of Electrical and Electronics Engineers -IEEE-:
RADECS 91. Vol.15. Radiation - effects on components and systems : First European Conference on Radiation and Its Effects on Devices and Systems, La Grande-Motte, near Montpellier, France, September 9 - 12, 1991
Piscataway: IEEE, 1992
ISBN: 0-7803-0208-7
ISBN: 0-7803-0209-5
European Conference on Radiations and their Effects on Devices and Systems <1, 1991, Montpellier>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer INT ()
14 MeV neutrons; gamma rays; laser diode; LED; light emitting diode; photodiode; pulsed irradiation; radiation damage

Commercially available diodes were irradiated at a flash X-ray source, a Co 60 gamma ray source, and a 14 MeV neutron generator. During irradiation at the Co 60 source the light output of the LEDs and LDs was measured continously. From time to time we also observed their emission spectrum. With the PDs we measured the preamplifier output during Co 60 irradiation as well as dark current and noise before and after irradiation. Determination of the sensitivity against neutrons was made off-line. After pulsed irradiation of PDs we measured how long a certain type of preamplifier was overdriven by the induced photocurrent. The main effect is a strong increase of the dark current by factors of 2 up to 5000.