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Pulsed laser deposition of crystalline PZT thin films



Surface and coatings technology 97 (1997), S.420-425 : Ill., Lit.
ISSN: 0257-8972
Fraunhofer ILT ()
deposition modelling; ferroelectric thin film; pulsed laser deposition; PZT

Sintered targets of PbZ(0.52)Ti(0.48)O3, are used in a pulsed laser deposition (PLD) process to deposit thin ferroelectric films onto a Pt/Ti/Si(111) substrate for electrical applications. Repetition rates vary between 1 and 200 Hz, the deposition temperature ranges from 500-800 deg C. After thin film deposition the films are treated with different post-annealing procedures. The influence of repetition rate, deposition temperature and post-annealing procedures on the morphology, stoichiometry, crystalline phase, and the resulting electrical properties of the deposited films is investigated. Analytical methods used are scanning electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, micro-Raman spectroscopy, and impedance measurements. A model for the dependence of film thickness and stoichiometry on repetition rate and substrate temperature is presented and compared to the experimental results.