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Properties of WSix-Schottky diodes on n-type GaAs sputtered under UHV background conditions

Schottky-Eigenschaften von gesputterten WSIx-Schichten auf n-GaAs
: Pletschen, W.; Kaufel, G.; Maier, M.; Olander, E.; Wiegert, J.; Bachem, K.H.; Rupprecht, H.S.

Sadana, D.K. ; Materials Research Society -MRS-:
Advances in materials, processing and devices in III-V compoundsemiconductors. Symposium
Pittsburgh/Pa., 1989 (Materials Research Society symposia proceedings 144)
ISBN: 1-55899-017-8
Symposium on Advances in Materials, Processing and Devices in III-V Compoundsemiconductors <1988, Boston/Mass.>
Fraunhofer IAF ()
GaAs mesfet; refractory gate process; Schottky gate

Multilayered WSi sub x films for use as gates in self-aligned refractory gate process of GaAs MESFETs have been RF sputtered onto GaAs wafers under UHV background conditions in order to study their structure and morphology as well as their contact electrical properties. Annealed films deposited at 300 degree C with single layer thickness of 6 and 3 nm for W and Si respectively have a smooth morphology free from cracks and blisters and show a good adhesion to the substrate. Schottky diodes prepared on n-GaAs exhibit an almost excellent I-V characteristics with a barrier height of 0.73 V and an ideality factor of 1.11. In addition E - and D-FETs fabricated on implanted s. i. wafers have good electrical parameters with transconductances of 200 mS/mm at 1 Mym gate length.