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Process latitude for sub-200 nanometer synchroton orbital radiation X-ray lithography

 
: Oertel, H.K.; Chlebek, J.; Weiß, M.

:

Japanese Journal of Applied Physics. Part 1, Regular papers, short notes and review papers 32 (1993), Nr.12B, S.5966-5970
ISSN: 0021-4922
International Micro Process Conference <6, 1993, Hiroshima>
Englisch
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer ISIT ()
photoresists; synchrotron radiation; X-ray lithography

Abstract
Image intensity profile and resist profile calculations using the X-ray modeling and simulation program are presented for storagering X-ray lithography proximity printing. The calculations indicate that there exists a sufficiently wide process window for the replication of 100-nm-wide absorber features, using an optimized set of parameters. The effect of nonvertical absorber sidewalls on the process window is investigated.

: http://publica.fraunhofer.de/dokumente/PX-29436.html