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1992
Conference Paper
Titel
Probing the In mole fraction limits for pseudomorphic MODFETs.
Alternative
Untersuchung des maximalen In-Anteils im Kanal pseudomorpher MODFETs
Abstract
Modulation doped Alsub0.2Gasub0.8As/InsubyGasub1minussubyAs high electron mobility Transistors (HEMT) were fabricated with In mole fractions in the channel between 0.25 and 0.35 to study the influence of high In mole fraction on the MODFET performance. No significant differences were observed in all the important figures of merit apart from breakdown voltage. These results represent therefore the performance limits of pseudomorphic MODFETs, with a mole fraction independent fsubT.lg product of 25.8 GHz.Mym when stripped for the pad capacitances.
Author(s)