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Probing the In mole fraction limits for pseudomorphic MODFETs.

Untersuchung des maximalen In-Anteils im Kanal pseudomorpher MODFETs
 

Univ. Politecnica de Madrid:
WOCSDICE 92. 16th European Workshop on Compound Semiconductor Devices and Integrated Circuits
Madrid, 1992
2 S. : Abb.,Tab.,Lit.
European Workshop on Compound Semiconductor Devices and Integrated Circuits <16, 1992, La Casona del Pinar>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
HEMT; high transistor performance; Höchstfrequenztransistor; MODFET; strained channel; vorgespannter Kanal

Abstract
Modulation doped Alsub0.2Gasub0.8As/InsubyGasub1minussubyAs high electron mobility Transistors (HEMT) were fabricated with In mole fractions in the channel between 0.25 and 0.35 to study the influence of high In mole fraction on the MODFET performance. No significant differences were observed in all the important figures of merit apart from breakdown voltage. These results represent therefore the performance limits of pseudomorphic MODFETs, with a mole fraction independent fsubT.lg product of 25.8 GHz.Mym when stripped for the pad capacitances.

: http://publica.fraunhofer.de/dokumente/PX-29346.html