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A precision current source in SIMOX technology for high temperature applications up to 570 K

: Verbeck, M.; Fiedler, H.-L.

Institute of Electrical and Electronics Engineers -IEEE-:
3rd International High Temperature Electronics Conference 1996. Transactions. Vol.1
Albuquerque, 1996
S.XI, 21-26
International High Temperature Electronics Conference <3, 1996, Albuquerque/N.Mex.>
Fraunhofer IMS ()
Hochtemperaturtechnik; Mikroelektronik; Schaltungsentwurf; Silizium-Gate-Technologie

This paper describes a precision, pulse-width controlled current source for high temperature applications. The output current is directly proportional to the duty-cycle of a pulse-width modulated input signal. Since the ambient temperature can be as high as 570 K a thin-film SIMOX-CMOS-process has been chosen to fabricate the current source. The power supply voltage of the current source is in the range of 14 V to 30 V. In order to get drain-source-breakdown voltages above 30 V, a drainextention had to be applied. Since even in a SIMOX-process leakage currents dictate the performance limitations of analog, integrated CMOS circuits with respect to temperature, film contacts and a H-shaped gate layout of the transmission gate transistors is necessary. The applied modifications result in drain-source-breakdown voltages above 30V and low leakage currents even at high temperatures.