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55 GHz dynamic frequency divider IC

55 GHz dynamischer Frequenzteiler IC


Electronics Letters 34 (1998), Nr.20, S.1973-1974 : Ill., Lit.
ISSN: 0013-5194
Fraunhofer IAF ()
aluminium compounds; field effect logic circuits; frequency divider; GaAs electronic; gallium arsenide; HEMT integrated circuits; high speed electronic; Hochgeschwindigkeitselektronik; III-V semiconductors; Indium compounds; millimeter wave; Millimeterwelle; pseudomorphe HEMTs; pseudomorphic HEMT

A divide-by-two dynamic frequency divider based on enhancement and depletion 0.2 mu m gate length pseudomorphic AlGaAs/InGaAs HEMTs (fT=68 GHz and 60 GHz) was designed and fabricated. High-speed operation up to 55 GHz has been measured. The circuit is based on source-coupled FET logic and has single-ended input and complementary outputs to ground. The power consumption is 300 mW using two supply voltages of 4 and -2.5 V.