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1992
Conference Paper
Titel
A 50 V smart power process with dielectric isolation by SIMOX
Abstract
A new process has been developed which provides dielectrically isolated power and low voltage devices by means of rather standard VLSI CMOS technology. Isolation is obtained by SIMOX and trenches. For smart power applications this process allows the manufacturing of 50 V vertical DMOS transistors (VDMOS) together with 50 V dielectrically isolated quasivertical DMOS transistors (QVDMOS). For control circuit design CMOS, high voltage PMOS transistors (HVPMOS), NPN transistors, JFETs, Zener and Schottky diodes are available on the same chip. Thus, the designer has at hand a wide range of devices which allows an optimun solution for many circuit applications.
Language
English