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40 GHz monolithically-integrated fully-balanced VCO using 0.3 mu m HEMTs

40 GHz monolithisch integrierter voll balancierter VCO hergestellt mittels 0.3 Mikrometer HEMTs


Electronics Letters 33 (1997), Nr.5, S.422-423 : Ill., Lit.
ISSN: 0013-5194
Fraunhofer IAF ()
electrical property; elektrische Eigenschaft; III-V heterostructure; III-V Heterostruktur; monolithic integration; monolithische Integration

A monolithically-integrated, fully balanced VCO with a central frequency of about 40GHz has been designed and realised using capacitively-coupled HEMT-triples as active components, on-chip coplanar waveguides as inductive devices, and junction capacitances of HEMTs as varactors. The chip has a DC consumption of 200mW.