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40 Gbit/s 1.55 mu m monolithic integrated GaAs-based PIN-HEMT photoreceiver

Monolithische Integration eines 40 Gbit/s 1.55 mu m PIN-HEMT Photoempfänger auf einem GaAs-Substrat
 

ECOC '98. 24th European Conference on Optical Communication. Vol.3: Postdeadline papers
Madrid: Telefonica de Espana S.A., 1998
ISBN: 84-89900-14-0
ISBN: 84-89900-17-5
S.121-123 : Ill., Lit.
European Conference on Optical Communication (ECOC) <24, 1998, Madrid>
European Exhibition on Optical Communication (EEOC) <1998, Madrid>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
monolithic integration; monolithische Integration; Photoempfänger; photoreceiver

Abstract
A 36.5 GHz bandwidth 1.55mu m wavelength PIN-HEMT photoreceiver with a distributed amplifier has been monolithically integrated on a 3-inch GaAs substrate. The PIN photodiode has a responsivity of 0.34A/W. Clearly-opened eye diagrams for a 40 Gbit/s optical data stream have been demonstrated.

: http://publica.fraunhofer.de/dokumente/PX-2900.html