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31 GHz static and 39 GHz dynamic frequency divider ICs using 0,2 mu m-AlGaAs/GaAs-HEMTs

31 GHz statische und 39 GHz dynamische Frequenzteiler in 0,2 Mikrometer AlGaAs/GaAs-HEMT-Technologie

Grünbacher, H.:
ESSCIRC '96. 22nd European Solid State Circuits Conference. Proceedings
Gif-sur-Yvette: Ed. Frontieres, 1996
ISBN: 2-86332-197-8
European Solid State Circuits Conference (ESSCIRC) <22, 1996, Neuachatel>
Fraunhofer IAF ()
HEMT; high speed frequency divider; Hochgeschwindigkeits-Frequenzteiler

A static and a dynamic frequency divider based on enhancement and depletion 0.2 mu m gate length AlGaAs/GaAs-HEMT (fT. = 60 / 55 GHz) technology were designed and fabricated. High-speed operations up to 31 GHz and 39 GHz for the static and dynamic frequency divider, respectively, have been achieved. The single-ended input and differential output to ground simplify many applications. The power consumption is 400 mW using two supply voltages of 3.3 V and -2.5 V for the static divider, and 450 mW using 3.8 V and -2.5 V for the dynamic divider.