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1993
Journal Article
Titel
Point defects in silicon carbide.
Alternative
Punktdefekte in Siliziumkarbid
Abstract
A review is given on recent progress made in a microscopic understanding of point defects in silicon carbide (SiC). Defect structures to be discussed include shallow nitrogen donors, group-3 acceptors, the transition metal impurities vanadium and titanium and radiation induced defects, like the silicon vacancy in SiC.