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30 GHz static frequency divider using a 0.2 mym AlGaAs/GaAs/AlGaAs HEMT technology

30 GHz Frequenzteiler unter Verwendung einer 0,2 Mikrometer AlGaAs/GaAs/AlGaAs HEMT Technologie
 

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Electronics Letters 31 (1995), Nr.24, S.2111-2112
ISSN: 0013-5194
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
frequency deviders; Frequenzteiler; integrated circuits; microwave integrated circuits

Abstract
A frequency devider based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.2 micrometer gate length has been designed and fabricated. The devider can be operated up to 30 GHz with a single-ended input signal with an input resistance of 50 Ohm. The output signals are differential with both internal load resistance at 50 Ohm.

: http://publica.fraunhofer.de/dokumente/PX-2886.html