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1993
Conference Paper
Titel
30 GHz direct modulation in p-doped In0.35Ga0.65As/GaAs MQW lasers
Alternative
30 GHz Direkt-Modulation in p-dotierten In0.35Ga0.65As/GaAs MQW-Lasern
Abstract
We demonstrate p-type modulation-doped strained- layer Insub0.35Gasub0.65As/GaAs multiple quantum well lasers which achieve 3-dB direct modulation bandwidths up to 30 GHz in a simple 3x200 Myqm mesa structure, under DC bias conditions and at a heat- sink temperature of 25 degree C.
Author(s)