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30 GHz direct modulation in p-doped In0.35Ga0.65As/GaAs MQW lasers

30 GHz Direkt-Modulation in p-dotierten In0.35Ga0.65As/GaAs MQW-Lasern
 

Ikegami, T.; Hasegawa, F.; Takeda, Y.:
Gallium arsenide and related compounds 1992. Proceedings
Bristol: IOP Publishing, 1993
S.949-950
International Symposium on Gallium Arsenide and Related Compounds <19, 1992, Karuizawa>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
high-speed modulation; Hochgeschwindigkeitsmodulation; MQW-Laser; p-doping; p-Dotierung; strained QW; verspannte QW

Abstract
We demonstrate p-type modulation-doped strained- layer Insub0.35Gasub0.65As/GaAs multiple quantum well lasers which achieve 3-dB direct modulation bandwidths up to 30 GHz in a simple 3x200 Myqm mesa structure, under DC bias conditions and at a heat- sink temperature of 25 degree C.

: http://publica.fraunhofer.de/dokumente/PX-2885.html