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20 Gbit/s long wavelength monolithic integrated photoreceiver grown on GaAs

Monolithische Integration eines 20 Gbit/s langwelligen Photoempfängers auf einem GaAs-Substrat
 

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Electronics Letters 33 (1997), Nr.7, S.624-626
ISSN: 0013-5194
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
integrated optoelectronics; integrierte Optoelektronik; MSM-Photodiode; optical receiver; optischer Empfänger

Abstract
The first 20Gbit/s 1.3-1.55mu m wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using AlGaAs/GaAs HEMTs. At a wavelength of 1.3mu m, the integrated InGaAs MSM photodiode has a responsivity of 0.32A/W and the photoreceiver has a -3 dB bandwidth of 16.5GHz. Clearly-opened eye diagrams for a 20Gbit/s 1.55mu m optical data stream have been demonstrated.

: http://publica.fraunhofer.de/dokumente/PX-2874.html