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Planar inductors on high-resistive SIMOX-substrates and their use in microwave components


Tielert, R. ; VDE/VDI-Gesellschaft Mikroelektronik, Mikro- und Feinwerktechnik -GMM-:
Mikroelektronik '97. Vorträge der GMM-Fachtagung
Berlin: VDE-Verlag, 1997 (GMM-Fachbericht 17)
ISBN: 3-8007-2247-X
S.311-318 : Lit.
VDE/VDI-Gesellschaft Mikroelektronik, Mikro- und Feinwerktechnik (Fachtagung) <1997, München>
Fraunhofer IMS, Außenstelle Dresden ( IPMS) ()
CMOS; Gütefaktor; induktive Spule; Mikrowellenoszillator; Mikrowellenverstärker; SIMOX

High-Q inductive elements are key components for RF-circuit design. In this contribution we report on the realization of planar inductors on high resistive SIMOX-substrates with quality factors up to 12 and their use in low-voltage circuits suitable for the frequency range from 1 to 3GHz. NMOS-transistors operating at an inductive load show excellent performance in high speed operation at low supply voltages. An amplifier and an oscillator operating at frequencies of about 2GHz at 1V supply voltage prove the high frequency capabilities of SIMOX/CMOS-technology.