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Picosecond optical nonlinearity in lead chalcogenide semiconductors.

Optische Nichtlinearitäten im Pikosekundenbereich in Bleichalkogenid-Halbleitern
: Buhleier, R.; Elsaesser, T.; Klann, R.; Lambrecht, A.


Applied Physics Letters 59 (1991), Nr.8, S.885-887 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IPM ()
Bleichalkogenid; infrared diode laser; infrared spectroscopy; Infrarotdiodenlaser; Infrarotspektroskopie; IV-VI-Compound; IV-VI-Verbindung; lead chalcogenide; molecular beam epitaxy; Molekularstrahlepitaxie; optical nonlinearity; optische Nichtlinearität; Picosecond Puls; Picosekundenpuls; Recombination Rate; Rekombinationsrate

Optical nonlinearities of PbSe are studied in picosecond pump-probe experiments at wavelengths from 4 to 8 micrometer. Excitation of an electron-hole plasma leads to a shift of the absorption edge to higher energies and to large changes of the refractive index by up to -0.1. The optical nonlinearities result from band filling by both electrons and holes. The time-dependent absorption change shows a partial recovery within 100 ps, giving evidence of enhanced recombination rates. Theoretical calculations of the absorption change are in agreement witht the experimental data.