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15 Gbit/s integrated laser diode driver using 0,3 mym gate length quantum well transistors.

15 Gbit/s integrierter Laserdiodentreiber mit 0,3 mym-Gatelänge Quantumwelltransistoren
 

Electronics Letters 28 (1992), Nr.3, S.222-223 : Abb.,Lit.
ISSN: 0013-5194
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
circuit design; Halbleiterlaser; integrated circuit; integrierte Schaltung; optical communication; optische Kommunikation; Schaltungsentwurf; semiconductor laser

Abstract
An integrated laser diode driver was realised using enhancement/depletion 0.3 Mym recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10Gbit/s with 50 Omega loads. The maximum DC and modulation current were 25 and 45 mA, respectively. The power consumption is less than 450 mW.

: http://publica.fraunhofer.de/dokumente/PX-2851.html