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A photoluminescence study of the transition from non-degenerate to degenerate doping in n-type silicon doped GaAs/AlGaAs quantum wells

Photolumineszenzstudie des Überganges von nicht-entarteter zu entarteter Dotierung in Si-dotierten GaAs/AlGaAs Quantum Wells
 

Anastassakis, E.M.; Joannopoulos, J.D.:
20th International Conference on the Physics of Semiconductors 1990
Singapore: World Scientific, 1990
ISBN: 981-02-0539-2
S.1377-1380 : Abb.,Lit.
International Conference on the Physics of Semiconductors <20, 1990, Thessaloniki>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
heterostructure; Heterostruktur; III-V Halbleiter; III-V semiconductors; photoluminescence; Photolumineszenz

Abstract
The transition from non-degenerate to degenerate doping in silicon center-doped 100 A GaAs/AlGaAs quantum wells has been studied via the observed excitonic and free carrier related photoluminescence (PL) and PL excitation (PLE) spectra. The critical doping level is about 1.0x10 high12qcm in 2D, a factor 2-3 higher than in bulk GaAs (3D). The observed effects of high donor doping on recombination dynamics and non-radiative processes are discussed.

: http://publica.fraunhofer.de/dokumente/PX-28414.html