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Photoluminescence and Raman spectroscopy of single delta-doped III-V semiconductor heterostructures

Photolumineszenz- und Ramanspektroskopie an einfach deltadotierten III-V Halbleiterstrukturen
: Wagner, J.; Richards, D.

Schubert, E.F.:
Delta-doping of semiconductors
Cambridge: Cambridge University Press, 1996
ISBN: 0-521-48288-7
Aufsatz in Buch
Fraunhofer IAF ()
delta doping; Deltadotierung; III-V Halbleiter; III-V semiconductors; raman spectroscopy; Ramanspektroskopie

The authors will focus on the photoluminescence (PL) and Raman spectroscopy of single delta-doped structures in which the doping spike is placed at the centre of a III-V semiconductor quantum well or double-heterostrucutre. It will be shown how, from a combination of these two experimental techniques, detailed information is obtained on the electronic structure of the two-dimensional electron-gas (2DEG) or hole-gas (2DHG) located at the n- or p-type delta-doping spike. In the first section, n-type delta-doped structures will be discussed. It includes the introduction of heterojunction barriers for the confinement of photogenerated minority carriers, the effect of the surface Fermi level position on the subband structure and occupancy, and the study of delta-doped strained quantum wells. The second section deals with p-type delta-doped double-heterostructures, highlighting the dependence of the hole-subband structure on the dopant density, the identification of heavy- and light-hole lev els by circularly plarised PL spectroscopy, and the spin-relaxation kinetics of photogenerated electrons. The third section will be devoted to the so-called Fermi edge singularity as an example of many-body effects in the optical spectra of the 2DEG (2DHG) formed in delta-doped GaAs:Si(Be)/Al(ind x)Ga(ind 1-x)As double-heterostructures.