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Photo- and electroluminescence investigation of rare earth ions in III-V semiconductors

: Ennen, H.

19th Conference on Solid State Devices and Materials
S.83-85 : Abb.,Lit.
Conference on Solid State Devices and Materials <19, 1987, Tokyo>
Fraunhofer IAF ()
Elektrolumineszenz; Erbium; Laserdiode; Neodym; Photolumineszenz; Seltene Erden; Techtdiode(infrarot)

Sharply structured photoluminescence bands were observed in the III-V semi-conductors InP, GaP, and GaAs doped with the rare earth (4fn)-ions Yb, Er, Nd and Pr. These emission bands in the near infrared spectral regino are due to internal 4f-4f transitions of trivalent (4fn)-ions. Zeeman measurements, optically detected magnetic resonance, electron spin resonance and photoluminescence excitation measurements were performed to determine the structure of the (4fn)-centers and to separate different rare earth complexes. The characteristic intra 4f-shell transitions could also be excited electrically in 4f-doped pn-diodes and laser diodes giving rise to incoherent and coherent radiation around 1.0 mym and 1.54 mym. (IAF)