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10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs

10 Gbit/s langwelliger pin-HEMT Photoempfänger auf GaAs
 

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Electronics Letters 33 (1997), Nr.19, S.1653-1654 : Ill., Lit.
ISSN: 0013-5194
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
HEMT; OEIC; Pin-Photodiode

Abstract
The first long wavelength pin-HEMT photoreceiver grown on GaAs has been manufactured using a 0.3mu m gate length AlGaAs/ GaAs HEMT process. At a wavelength of 1.55mu m the monolithically integrated InGaAs pin photodiode has a responsivity of 0.40A/W, and the photoreceiver has a -3dB bandwidth of 6.9GHz. Clear and open eye diagrams for a 10Gbit/s 1.55mu m. optical data stream have been demonstrated.

: http://publica.fraunhofer.de/dokumente/PX-2831.html