Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

10 Gbit/s long-wavelength monolithic integrated optoelectronic receeiver grown on GaAs

Langwelliger 10Gbit/s monolithisch integrierter Empfänger auf einem GaAs-Substrat
 

Electronics Letters 32 (1996), Nr.391-392
ISSN: 0013-5194
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
GaAs; integrated optoelectronics; integrierte Optoelektronik; optical receiver; optischer Empfänger

Abstract
The first 10 Gbit/s long-wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 mu m gate length AlGaAs/GaAs HEMT process. At a wavelength of 1.3 mu m the integrated InGaAs MSM photodiode has a DC responsivity of 0.34 A/W. The photoreceiver bandwidth is 7.1 GHz and its sensitivity is better than -14.7 dBm (BER=10-9)

: http://publica.fraunhofer.de/dokumente/PX-2830.html