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An 9-GHz silicon-on-insulator CMOS amplifier

 
: Bathel, W.; Budde, W.

International Conference on Electronics, Circuits and Systems 1998. Proceedings. Vol.2
Piscataway, NJ: IEEE, 1998
ISBN: 0-7803-5008-1
S.27-30
International Conference on Electronics, Circuits and Systems (ICECS) <5, 1998, Lisboa>
Englisch
Konferenzbeitrag
Fraunhofer IMS, Außenstelle Dresden ( IPMS) ()
9 GHz Verstärker; HF-Schaltung; HF/SIMOX

Abstract
A high speed CMOS amplifier operating at 9 GHz is presented in this paper. The amplifier consists of four single cascode stages connected in series. On-chip spiral inductors operating at their resonant frequency serve as load elements of each cascode stage. Good input and output matching was obtained using inductor-capacitor matching networks. The circuit drains 56 mA from 4.2 V supply voltage. The gain is 25 dB at 9.3 GHz with a bandwidth of approx. 180 MHz.

: http://publica.fraunhofer.de/dokumente/PX-2823.html