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1985
Journal Article
Titel
Performance of carbon monoxide-sensitive MOSFET's with metal-oxide semiconductor gates
Titel Supplements
Parallelausgabe: Publications 1985. IMS-Duisburg.
Abstract
A multilayer PdO-Pd-gate metallization was investigated at a MOS-CO sensor. This type of metallization gives a high CO sensitivity and a good electrical control of the transistor. The performance of this sensor was investigated in comparison to a commercial SnO2 resistor CO sensor. (IMS)