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Performance comparison of high-speed GaAs/Al0.25Ga0.75As and In0.35Ga0.65As/GaAs multiple quantum well lasers suitable for monolithic integration.

Performance-Vergleich von Hochgeschwindigkeits-GaAs/Al0.25Ga0.75As und In0.35Ga0.65As/GaAs Multiple-Quantum-Well-Lasern, die für monolithische Integration geeignet sind
 

TU Berlin:
ECOC '92. 18th European Conference on Optical Communication
Berlin, 1992
S.261-264 : Abb.,Tab.,Lit.
European Conference on Optical Communication (ECOC) <18, 1992, Berlin>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
differential gain; differentieller Gewinn; high-speed laser; Hochgeschwindigkeitslaser; modulation response; Modulationsantwort; monolithic integration; monolithische Integration; pseudomorphes InGaAs; pseudomorphic InGaAs; quantum wells; strained layer; verspannte Schicht

Abstract
Vertically-compact high-speed GaAs/Alsub0.25Gasub0.75As and Insub0.35Gasub0.65As/GaAs multiple quantum well (MQW) lasers designed for monolithic integration with MODFET-based circuits are compared. 3 dB modulation bandwidths of 16 GHz and 21 GHz, respectively, are demonstrated.

: http://publica.fraunhofer.de/dokumente/PX-28168.html