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Passivation effects in novolak based resists during O2-RIE

: Jagdhold, U.; Pelka, J.


Microelectronic engineering 17 (1992), Nr.1-4, S.331-335
ISSN: 0167-9317
International Conference on Microlithography: Microcircuit Engineering (ME) <17, 1991, Rome>
Fraunhofer ISIT ()
passivation; polymers; resists; sputter etching

A model is presented explaining the formation of the carbonization in novolak based resists under intense ion bombardment (e.g. Ar+- or O2-RIE, Implantation). As an example for the carbonization the authors demonstrate sidewall passivation effects in a hole during a tri-level etching process. The influence of the ion current density, the neutrals, the dose and the radiation divergence on the passivation is discussed. plasma-enhanced chemical vapor deposited silicon oxide films.