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Passivated 0,15 mu m InAlAs/InGaAs HEMTs with 500 GHz f(max). HF performance, thermal stability and reliability

Passivierte 0,15 Mikrometer InAlAs/InGaAs HEMTs mit einem f(max) von 500 GHz. HF Leistungsfähigkeit, thermische Stabilität und Zuverlässigkeit
: Chertouk, M.; Dammann, M.; Massler, M.; Köhler, K.; Weimann, G.

Sakaki, H.:
Compound Semiconductors 1998. Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors
Bristol: IOP Publishing, 1999 (Institute of Physics - Conference Series 162)
ISBN: 0-7503-0611-4
International Symposium on Compound Semiconductors <25, 1998, Nara>
Fraunhofer IAF ()
HF Leistungsfähigkeit; HF performance; hydrogen; InAlAs/InGaAs HEMT; InP-based HEMT; maximale Schwingungsfrequenz; maximum oscillation frequency; reliability; thermal stability; thermische Stabilität; Wasserstoff; Zuverlässigkeit

We report on fabrication, performance and reliability of 0. 15 mu m gate-length passivated InAlAs/InGaAs HEMTs with pseudomorphic channels. A 60 mu m gate width device had an ft of 160 GHz, and the extrapolated f (max) of 500 GHz is the highest reported to date for any passivated transistor. This performance is mainly due to the low gate-drain feed-back capacitance of 45 fF/mm, giving a C(gs)/C(gd) ratio of 35, and to the high intrinsic transconductance of 1,7 S/mm. The robustness of our lnP-based HEMT technology will be demonstrated by high temperature stress under N2 and forming gas with 10 % H2 in N2 . Furthermore, DC accelerated life tests were made on our devices at different temperatures, these lead to an Arrhenius plot with an activation energy of 1.8 eV and an extrapolated mean time to failure of 6x.10(exp6) hours at 125 deg C ambient temperature.