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A 4 Gs/s comparator fabricated in an AlGaAs/GaAs heterojunction bipolar process

 
: Cepl, F.; Baureis, P.; Seitzer, D.; Zwicknagel, P.

:

Jopke, J.V. ; Institute of Electrical and Electronics Engineers -IEEE-:
Bipolar Circuits and Technology Meeting 1991. Proceedings
Piscataway, NJ: IEEE Order Department, 1991
ISBN: 0-7803-0104-8
S.39-42
Bipolar Circuits and Technology Meeting <1991, Minneapolis>
Englisch
Konferenzbeitrag
Fraunhofer IIS A ( IIS) ()
comparator; GaAs; gallium arsenide; HBT; Komparator; thermal effect; thermischer Effekt

Abstract
This paper describes a comparator circuit fabricated ub ab AlGaAs/GaAs heterojunction bipolar process. Nonlinear current gain, thermal effects, and parasitic base collector resistance have been included in the simulation model.

: http://publica.fraunhofer.de/dokumente/PX-2797.html