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Oxide layer thickness measurement

: Schneider, C.

European Semiconductor 20 (1998), Nr.1, S.14-17
ISSN: 0265-6027
ISSN: 0957-5685
Fraunhofer IIS B ( IISB) ()
Ellipsometrie; ellipsometry; film thickness; Halbleiterfertigung; in situ-Meßtechnik; in situ metrology; microelectronics; Mikroelektronik; Ofentechnik; oxidation; oxide layer; Oxidschicht; Schichtdicke; semiconductor manufacturing

The paper describes a novel technique suitable to measure oxide layer thickness growth inside a vertical furnace in real time. A spectroscopic ellipsometer is mounted to the base plate of a production-type furnace. The optical system consisting of light-guiding quartz prisms requires only minor modifications of the processing equipment. Moreover, the materials used are completely compatible to ultra-pure high temperature processing.