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Overhauser shift and nuclear spin relaxation in Al x Ga 1-x As/GaAs heterostructures.

Overhauser-Verschiebung und Kernspin-Relaxation in Al x Ga 1-x As/GaAs-Heterostrukturen
: Kamp, G.; Obloh, H.; Schneider, J.; Weimann, G.; Ploog, K.


Semiconductor Science and Technology 7 (1992), S.542-546 : Abb.,Tab.,Lit.
ISSN: 0268-1242
ISSN: 1361-6641
Fraunhofer IAF ()
2-dimensional electron gas; dynamical nuclear polarisation; dynamische Kernspin-Polarisation; Overhauser shift; Overhauser-Verschiebung; zweidimensionales Elektronengas

In low-dimensional systems dynamical nuclear polarization is a sensitive tool for the study of electron-nuclear interaction. We report on Overhauser-shift experiments on the 2DEG of AlsubxGasub1minusxAs/GaAs heterostructures. The conduction electron spin resonance has been electrically detected via the associated change of the magnetoresistance Rsubxx, and dynamical nuclear polarization (the Overhauser effect) has been achieved by saturating the conduction electron spin resonance (CESR). In order to investigate the nuclear spin relaxation the samples were embedded in an RF coil and the temporal decay of the Overhauser shift was followed with and without additional NMR irradiation. Different spin-lattice relaxation times of high69Ga, high71Ga and high75As could be detected and small deviations from a pure Korringa behaviour have been found.