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Optoelektronisches Bauelement

Optoelectronic component
 
: Lueth, H.; Mueller, H.D.; Schneider, J.; Struempler, R.

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Frontpage ()

DE 1989-3915701 A: 19890513
DE 1989-3915701 A: 19890513
DE 3915701 A1: 19901122
H01L0033
Deutsch
Patent, Elektronische Publikation
Fraunhofer IAF ()

Abstract
The invention relates to an optoelectronic component with a silicon or III-V semiconductor layer and doping with lanthanoids for generating an optical signal whose wavelength is determined by the 4f ion. The object of the invention is to produce an integrable component made of silicon or III-V semiconductor materials. To this end, the invention is provided with a fluoride layer which is grown on the silicon or semiconductor layer. The lanthanoid ions are integrated in the fluoride layer. The fluoride layer can be deposited on the layer using a polycrystalline or epitaxial process.

: http://publica.fraunhofer.de/dokumente/PX-27650.html