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Optical properties of low temperature grown GaAs - the influence of a hydrogen plasma treatment

Optische Eigenschaften von GaAs welches bei niedrigen Temperaturen gewachsen wurde - Einfluss der Wasserstoff-Plasma Behandlung
 
: Weber, J.; Köhler, K.; Vetterhöffer, J.

Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials
1994
S.202-204 : Abb.,Tab.,Lit.
International Conference on Solid State Devices and Materials <1994, Yokohama>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductors; low temperature growth; niedrige Temperatur; optical property; optische Eigenschaft; Wachstum

Abstract
Defects generated during the growth process in low temperature grown GaAs are studied by infrared (IR) absorption and low temperature photoluminescence. The growth temperature and As4-pressure during growth determine critically the density of antisite related defects. Annealing the layers well above the growth temperature reduces the defect density. Hydrogen plasma treatment has only a minor effect on the defect density. However, hydrogen plasma treatment at temperatures below the growth temperature of the layers reveal a new photoluminescence (PL) band which is tentatively assigned to a complex involving hydrogen and an instrinsic defect.

: http://publica.fraunhofer.de/dokumente/PX-27354.html