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Optical emission from the one-dimensional electron gas in narrow modulation-doped GaAs/'InGa'As/'AlGa'As quantum wires fabricated by lateral top barrier modulation

Optische Emission eines eindimensionalen Elektronengases in schmalen modulationsdotierten GaAs/'InGa'As/'AlGa'As Quantendrähten hergestellt durch eine laterale Modulation der hohen Barriere
: Wagner, J.; Behr, D.; Richards, D.; Bickl, T.; Forchel, A.; Emmerling, M.; Köhler, K.


Superlattices and Microstructures 14 (1993), Nr.4, S.265-270 : Abb., Lit.
ISSN: 0749-6036
Fraunhofer IAF ()
eindimensionales Elektronengas; one-dimensional electron gas; photoluminescence spectroscopy; Photolumineszenzspektroskopie; Quantendraht; quantum wire

We report on the fabrication and photoluminescence characterisation of n-type doped quantum wires, which are based on a modulation-doped GaAs/(InGa)As/(AlGa)As quantum well structure, as used in inverted high electron mobility transistors. Lateral patterning was performed by electron beam lithography followed by a selective wet etch process to remove the n-type doped GaAs top barrier between the wire regions. The removal of the top barrier was verified by micro-Raman spectroscopy. Spatially indirect emission from the one-dimensional (1D) electron gas formed in the quantum wires is observed in low-temperature photoluminescence, even for the narrowest geometrical wire width of 23 nm. The emission shows a blue-shift for wire widths below 100 nm, which amounts to up to 60 meV for the narrowest wires.