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Optical detection of resonant tunneling in GaAs/AlAs superlattices.

Optische Detektion von resonantem Tunneln in GaAs/AlAs Übergittern
: Grahn, H.T.; Klitzing, K. von; Ploog, K.; Schneider, H.

Döhler, G.H. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.; Society of Vacuum Coaters -SVC-, Albuquerque/NM:
Quantum-well and superlattice physics III : 18-19 March 1990, San Diego, California
Bellingham/Wash.: SPIE, 1990 (SPIE Proceedings Series 1283)
ISBN: 0-8194-0334-2
S.130-142 : Abb.,Lit.
Symposium on Advances in Semiconductors and Superconductors: Physics Toward Device Application <1990, San Diego/Calif.>
Fraunhofer IAF ()
photocurrent; photoluminescence; Photolumineszenz; Photostrom; resonant tunneling; resonantes Tunneln; superlattice; Übergitter

We report on the investigation of the miniband transport regime in GaAs-AlAs superlattices by electrical time-of-flight experiments. The temperature dependence of the low-field drift mobility is used to obtain information about the underlying transport mechanisms. The photocurrent as a function of the applied field can be fitted over a wide temperature range with a modified Kazarinov-Suris model.