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Optical characterization of heavily doped silicon

 
: Wagner, J.

Solid-State Electronics 30 (1987), Nr.11, S.1117-1120 : Abb.,Lit.
ISSN: 0038-1101
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
Charakterisierung(optisch); Photolumineszenz; Ramanstreuung; Silizium(hochdotiert)

Abstract
Out of a variety of optical techniques used to characterize heavily doped seminconductors photoluminescence and Raman spectroscopy will be discussed as tools to study heavy doping effects. Photoluminescence spectroscopy is sensitive to electronic transitions between the conduction and valence band whereas electronic Raman scattering probes transitions within either band. Parameters relevant to device physics such as the band gap shrinkage due to heavy doping are extracted from these measurements. It is further shown that both techniques are applicable to the characterization of thin heavily doped implanted or epitaxial layers. (IAF)

: http://publica.fraunhofer.de/dokumente/PX-27307.html