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Optical and electrical properties of doped zinc oxide films prepared by AC reactive magnetron sputtering

: Szyszka, B.; Jäger, S.

Pulker, H.K.:
Coatings on glass. Proceedings of the First International Conference on Coatings on Glass 1996 - ICCG. Advanced technologies and future trends for high volume and/or large areas
Amsterdam: North-Holland, 1997 (Journal of non-crystalline solids 218)
International Conference on Coatings on Glass (ICCG) <1, 1996, Saarbrücken>
Fraunhofer IST ()
Al-dotiert; Hall-Messung; In-dotiert; Low-E-Beschichtung; Strukturuntersuchung; transparente leitfähige Oxidschicht; TwinMag; Zinkoxid

Aluminum-doped and indium-doped zinc oxide films have been prepared by reactive AC magnetron sputtering (twin-cathode arrangement with AC plasma excitation at frequency of 40 kHz) from metallic targets with different dopant concentrations at substrate temperature of about 573 K. The optical, electrical and structural properties of the sputtered ZnO:Al and ZnO:In thin films have been investigated by optical spectroscopy (UV-IR), X-ray diffraction, Hall-mobility and conductivity measurements. For aluminum-doped ZnO films a minimum resistivity of 4.0X10(exp -4) ohm cm at high transparency (larger than 89 per cent at film thickness of 530 nm) has been obtained at Al concentration in the target material of 1.2 wt. per cent. Higher resistivity of 8.7 x 10(exp -4)ohm cm (85 per cent transmission at film thickness of 400 nm) has been observed for indium-doped zinc oxide films a dopant concentration of about 2 wt. per cent In in the target material.