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1987
Journal Article
Titel
Open silicon stencil masks for demagnifying ion projection
Abstract
The demagnifying ion projection, a lithography technique for patterns in the sub-mym-range, requires open stencil masks. A process scheme for these masks is proposed which involves CMOS technology and a synchrotron exposure step. The masks obtained were well adapted to the special requirements of the apparatus concerning beam divergence and heat load. (IMT)