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GaAS one-sun and concentrator solar cells based on LPE-ER grown structures

 

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IEEE Electron Devices Society; Institute of Electrical and Electronics Engineers -IEEE-:
IEEE First World Conference on Photovoltaic Energy Conversion 1994. Vol.2 : Conference record of the Twenty Fourth IEEE Photovoltaic Specialists Conference 1994; Hilton Waikoloa Village, Waikoloa, Hawaii, December 5 - 9, 1994
Piscataway, NJ: IEEE Service Center, 1994
ISSN: 0160-8371
ISBN: 0-7803-1460-3
ISBN: 0-7803-1459-X
ISBN: 0-7803-1461-1
S.1697-1700
World Conference on Photovoltaic Energy Conversion <1, 1994, Waikoloa/Hawaii>
Photovoltaic Specialists Conference <24, 1994, Waikoloa/Hawaii>
Englisch
Konferenzbeitrag
Fraunhofer ISE ()
III-V-Solarzellen

Abstract
The liquid-phase epitaxy etchback regrowth (LPE-ER) technique was used to grow AlGaAs/GaAs heteroface and AlGaAs/AlyGa1-y As(0.1