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1.3 mym monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

1.3 mym monolithisch integrierter optoelektronischer Empfänger auf GaAs mit einer InGaAs-MSM-Photodiode und AlGaAs/GaAs HEMTs


Institute of Electrical and Electronics Engineers -IEEE-:
International Electron Devices Meeting '94. Proceedings
New York/N.Y., 1994 (IEDM Technical Digest)
S.935-937 : Abb.,Lit.
International Electron Devices Meeting <1994, San Francisco/Calif.>
Fraunhofer IAF ()
InGaAs-MSM-Photodiode; langwelliger Empfänger; long-wavelength receiver; optoelectronics; Optoelektronik

The first 1.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAS HEMTs grown on a GaAs substrate has been fabicated. At each differntial output the transimpedance is 26.8 komega. The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.