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Observation of local SIMOX layers by microprobe RBS

: Kinomura, A.; Horino, Y.; Mokuno, Y.; Chayahara, A.; Kiuchi, M.; Fujii, K.; Takai, M.; Lohner, T.; Ryssel, H.; Schork, R.


Nuclear instruments and methods in physics research, Section A. Accelerators, spectrometers, detectors and associated equipment 85 (1994), S.921-924
ISSN: 0167-5087
ISSN: 0168-9002
Fraunhofer IIS B ( IISB) ()
ion implantation; microprobe; oxide; oxygen; Rutherford backscattering; silicon; SIMOX

Local SIMOX layers formed by oxygen implantation through an SiO2 mask were analyzed by microprobe RBS with 1.5 MeV helium ions. Lateral and cross-sectional images of Si and O atoms could be successfully obtained by an RBS mapping method. The O images suffered from more statistical fluctuation than the Si images in spite of higher total yields. The mapping images were used to find process-failure patterns of the local SIMOX layer.